Metal‐Insulator Transition: 3D Local Manipulation of the MetalInsulator Transition Behavior in VO2 Thin Film by Defect‐Induced Lattice Engineering (Adv. Mater. Interfaces 8/2018)

Qi Jia Jörg Grenzer Huabing He Wolfgang Anwand Yanda Ji Ye Yuan Kai Huang Tiangui You Wenjie Yu Wei Ren Xinzhong Chen Mengkun Liu Stefan Facsko Xi Wang Xin Ou

1870034 First Published: 23 April 2018

3D local manipulation of metal‐insulator transition in VO2 is achieved by noble gas ion implantation, which is essential for the fabrication of highly integrated and tunable electronic or photonic devices, for example, metamaterials, fieldeffect transistors, highdensity memory devices and optical manipulators. This is reported by Xin Ou and co‐workers in article number 1701268.